半导体物理学(第2版,影印版) 世界图书出版公司 pmlz 2025 pdf 下载 kindle mobi docx 百度云

本书是一部分讲述半导体物理学的教材，为高年级本科生、研究生学习这门学科提供了大量丰富的材料，使得读者能够进入更深层次的学习和研究。一方面，这部教材是固态物理学和半导体物理之间的一个很好的平衡；另外一方面，是各种各样的半导体设备和它们在电子和光子设备中应用的很好展示。书中强调了半导体，如合金、异质结构、纳米结构等领域的实际应用方面，这些都是半导体物理学研究不可或缺，但又常常被忽略。书中也包罗了一些更高层次的话题，如Bragg错误、共振腔、极化和磁性半导体。本教材中给出许多结果的公式推导，这样可以更好理解这门科目。学习半导体物力学需要极少的固态物理学知识即可。这是第二版，较第一版许多内容得到了扩展，并且在深度上也有所增加，如掺杂剂扩散、纳米线、半导体的重组、多连接极细胞、量子点、和LED、薄膜晶体管、基于碳的纳米结构和透明导电氧化物。

1 Introduction

1.1 Timetable

1.2 Nobel Prize Winners

1.3 General Information

Part 1 Fundamentals

2 Bonds

2.1 Introduction

2.2 Covalent Bonds

2.2.1 Electron—Pair Bond

2.2.2 sp3 Bonds

2.2.3 sp2 Bonds

2.3 Ionic Bonds

2.4 Mixed Bonds

2.5 Metallic Bonding

2.6 van—der—Waals Bonds

2.7 Hamilton Operator of the Solid

3 Crystals

3.1 Introduction

3.2 Crystal Structure

3.3 Lattice

3.3.1 Unit Cell

3.3.2 Point Group

3.3.3 Space Group

3.3.42D Bravais Lattices

3，3.53D Bravais Lattices

3.3.6 Polycrystalline Semiconductors

3.3.7 Amorphous Semiconductors

3.4 Important Crystal Structures

3.4.1 Rocksalt Structure

3.4.2 CsCl Structure

3.4.3 Diamond Structure

3.4.4 Zincblende Structure

3.4.5 Wurtzite Structure

3.4.6 Chalcopyrite Structure

3.4.7 Fluorite Structure

3.4.8 Delafossite Structure

3.4.9 Perovskite Structure

3.4.10 NiAs Structure

3.4.11 Further Structures

3.5 Polytypism

3.6 Reciprocal Lattice

3.6.1 Reciprocal Lattice Vectors

3.6.2 Miller Indices

3.6.3 Brillouin Zone

3.7 Alloys

3.7.1 Random Alloys

3.7.2 Phase Diagram

3.7.3 Virtual Crystal Approximation

3.7.4 Lattice Parameter

3.7.5 Ordering

4 Defects

4.1 Introduction

4.2 Point Defects

4.2.1 Point Defect Types

4.2.2 Thermodynamics

4.2.3 Diffusion

4.2.4 Dopant Distribution

4.2.5 Large Concentration Effects

4.3 Dislocations

4.3.1 Dislocation Types

4.3.2 Visualization of Dislocations by Etching

4.3.3 Impurity Hardening

4.4 Extended Defects

4.4.1 Micro—cracks

4.4.2 Stacking Faults

4.4.3 Grain Boundaries

4.4.4 Antiphase and Inversion Domains

4.5 Disorder

5 Mechanical Properties

5.1 Introduction

5.2 Lattice Vibrations

5.2.1 Monoatomic Linear Chain

5.2.2 Diatomic Linear Chain

5.2.3 Lattice Vibrations of a Three—Dimensional Crystal

5.2.4 Density of States

5.2.5 Phonons

5.2.6 Localized Vibrational Modes

5.2.7 Phonons in Alloys

5.2.8 Electric Field Created by Optical Phonons

5.3 Elasticity

5.3.1 Thermal Expansion

5.3.2 Stress—Strain Relation

5.3.3 Biaxial Strain

5.3.4 Three—Dimensional Strain

5.3.5 Substrate Bending

5.3.6 Scrolling

5.3.7 Critical Thickness

5.4 Cleaving

6 Band Structure

6.1 Introduction

6.2 Electrons in a Periodic Potential

6.2.1 Bloch's Theorem

6.2.2 Free—Electron Dispersion

6.2.3 Kronig—Penney Model

6.2.4 Lattice Vector Expansion

6.2.5 Kramer's degeneracy

6.3 Band Structure of Selected Semiconductors

6.3.1 Silicon

6.3.2 Germaruum

6.3.3 GaAs

6.3.4 GaP

6.3.5 GaN

6.3.6 Lead Salts

6.3.7 Chalcopyrites

6.3.8 Delafossites

6.3.9 Perovskites

6.4 Alloy Semiconductors

6.5 Amorphous Semiconductors

6.6 Systematics of Semiconductor Band Gaps

6.7 Temperature Dependence of the Band Gap

6.8 Electron Dispersion

6.8.1 Equation of Electron Motion

6.8.2 Effective Mass of Electrons

6.8.3 Polaron Mass

6.8.4 Nonparabolicity of Electron Mass

6.9 Holes

6.9.1 Hole Concept

6.9.2 Hole Dispersion Relation

6.9.3 Valence—Band Fine Structure

6.1 Strain Effect on the Band Structure

6.10.1 Strain Effect on Band Edges

6.10.2 Strain Effect on Effective Masses

6.10.3 Interaction with a Localized Level

6.11 Density of States

10.2.3 Stimulated Emission

10.2.4 Net Recombination Rate

10.2.5 Recombination Dynarrucs

10.2.6 Lasing .

10.3 Exciton Recombination

10.3.1 Free Excitons

10.3.2 Bound Excitons

10.3.3 Alloy Broadening

10.4 Phonon R，eplica

10.5 Self—absorption

10.6 Donor—Acceptor Pair Transitions

10.7 Inner—Impurity Recombination

10.8 Auger Recombination

10.9 Band—Impurity Recombination

10.9.1 Shockley—Read—Hall Kinetics

10.9.2 Multilevel Traps.

10.1 Field Effect

10.10.1 Thermally Activated Emission

10.10.2 Direct Tunneling

10.10.3 Assisted Tunneling

10.11 Recombination at Extended Defects

10.11.1 Surfaces

10.11.2 Grain Boundaries

10.11.3 Dislocations

10.12 Excess—Carrier Profiles

10.12.1 Generation at Surface

10.12.2 Generation in the Bulk

……

Part 2 Selected Topics

Part 3 Applications

暂无相关内容，正在全力查找中

暂无出版社相关信息，正在全力查找中！

暂无相关书籍摘录，正在全力查找中！

在线阅读地址：半导体物理学(第2版,影印版) 世界图书出版公司在线阅读

在线听书地址：半导体物理学(第2版,影印版) 世界图书出版公司在线收听

在线购买地址：半导体物理学(第2版,影印版) 世界图书出版公司在线购买

暂无原文赏析，正在全力查找中！

暂无其它内容！